An optimized scalable BSIM macromodel for HV double-diffused drain MOSFET I-V characteristics

作者：Xu Jiayi^*; Shi Yanling; Ren Zheng; Hu Shaojian; Chen Shoumian; Zhao Yuhang; Ding Yanfang; Lai Zongsheng

来源：IEEE Transactions on Power Electronics, 2008, 23(2): 1027-1030.

DOI：10.1109/TPEL.2008.918358

• high-voltage double diffused drain metal oxide semiconductor field effect transistor (HV DDDMOSFET)
• macromodel
• metal semiconductor field effect transistor (MESFET)
• small-dimension model

This letter presents a scalable macromodel dedicated to the I-V characteristics of the high-voltage double diffused drain metal oxide semiconductor field effect transistor (MOSFET), which can be widely used in SPICE simulators and electronic design automation tools. The scalable model has been validated for different device geometries: large dimension (L = 20 mu m, W = 20 mu m), narrow dimension (L =20 mu m, W = 1.8 mu m/2 mu m/5 mu m), and short dimension (L = 1.2 mu m/1.5 mu m/2 mu m/3 mu m/5 mu m, W = 20 mu m). The variable-resistance feature of the lightly-doped drain has been simulated by metal semiconductor FET and diode, instead of by variable resistance which the Berkeley short channel insulated gate field effect transistor model (BSIM) does not support. This approach not only improves the utility value of the macromodel, but also considers the physical effects of the high-voltage MOSFET. Furthermore, this scalable macromodel can be applied to the modeling software tools based on the SPICE BSIM model.

• 出版日期2008-3
• 单位华东师范大学