AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers

作者：Zhao, Songrui; Mi, Zetian^*

来源：IEEE Journal of Quantum Electronics, 2018, 54(6): 2001009.

DOI：10.1109/JQE.2018.2870439

• GaN
• molecular beam epitaxy
• deep ultraviolet laser
• nanowire

In this paper, we review the recent progress of AlGaN nanowire heterostructures and the demonstration of electrically pumped semiconductor deep ultraviolet (UV) lasers with such nanowires. Future prospects and challenges for nanowire deep UV lasers are also presented.

• 出版日期2018-12
• 单位浙江大学