Near ultraviolet light emitting diodes using ZnMgO:N/ZnO hetero-junction grown by MOVPE

作者：Fujita Yasuhisa^*; Yanase Shogo; Nishikori Hirokazu; Hiragino Yuto; Furubayashi Yutaka; Lin Jie; Yoshida Toshiyuki

来源：Journal of Crystal Growth, 2017, 464: 226-230.

DOI：10.1016/j.jcrysgro.2016.10.085

• Doping
• Metalorganic chemical vapor deposition
• Oxides
• Semiconducting II-VI materials
• Light emitting diodes

A ZnMgO:N/ZnO/ZnO:Ga single hetero-junction light emitting diode structure on Al2O3 (11 (2) over bar0) substrate was fabricated by metalorganic vapor phase epitaxy. By using ZnMgO:N as a substitute for a ZnO:N top layer of a homojunction LED, improved rectifying current-voltage characteristics were obtained. Although the device had a heating problem and the luminescent area was partly in the ZnMgO:N layer, a sharp ultraviolet electroluminescence emission at 3.17 eV was successfully observed at room temperature.

• 出版日期2017-4-15