The effect of growth parameters on CrN thin films grown by molecular beam epitaxy

作者：Liu Y H^*; Wang Kangkang; Lin Wenzhi; Chinchore Abhijit; Shi Meng; Pak Jeongihm; Smith A R; Constantin Costel

来源：Thin Solid Films, 2011, 520(1): 90-94.

DOI：10.1016/j.tsf.2011.06.052

• Chromium nitride
• Crystalline orientation
• Thin films
• Molecular beam epitaxy
• Scanning tunneling microscopy
• Reflection high energy electron diffraction
• X-ray diffraction

In this paper, we report on the controlling of the effect of growth parameters such as substrate temperature and the ratio of Cr and N atoms on phase formation, surface morphology and crystallization of CrN(001) thin films grown by plasma-assisted molecular beam epitaxy on the MgO(001) substrate. The reflection high energy electron diffraction, atomic force microscopy. X-ray diffraction and scanning tunneling microscopy are used to characterize the thin films grown under various conditions. High-quality CrN(001) thin films are achieved at a substrate temperature 430 degrees C with a low Cr deposition rate.

• 出版日期2011-10-31
• 单位Los Alamos