摘要

Multiple wall carbon nanotube (MWNT) networks form Schottky-like heterojunction on n-type silicon substrate. Acid doping down-shifts the Fermi level of the MWNTs, can significantly reduce the internal resistance of the MWNT film. Wetting the MWNT networks with nitric or sulfuric acid can form MWNT-acid-Si photoelectrochemical units. The photoelectrochemical units and the Si-MWNT heterojunctions connected in parallel on the same side of the Si substrate, consequently boosting the power conversion efficiency by more than 10 times.

  • 出版日期2014-8