MOVPE of device-oriented wide-band-gap III-N heterostructures

作者：Lundin W V^*; Sakharov A V; Tsatsulnikov A F; Ustinov V M

来源：Semiconductor Science and Technology, 2011, 26(1): 014039.

DOI：10.1088/0268-1242/26/1/014039

The paper reviews metal-organic vapor phase epitaxy (MOVPE) of some key elements of III-N devices: InGaN quantum wells, InGaN/GaN and Al(Ga)N/GaN short-period superlattices, AlGaN/GaN and InAlN/GaN distributed Bragg reflectors. It is demonstrated that interaction of III-N materials with hydrogen is one of the key processes in MOVPE of these materials. Depending on the desired structure, this process may be fruitfully used or should be suppressed by the proper adjustment of reactor conditions.

• 出版日期2011-1