NH3 Plasma Pretreatment of 4H-SiC(000(1)over-bar) Surface for Reduction of Interface States in Metal-Oxide-Semiconductor Devices

作者：Iwasaki Yoshinori^*; Yano Hiroshi; Hatayama Tomoaki; Uraoka Yukiharu; Fuyuki Takashi

来源：Applied Physics Express, 2010, 3(2): 026201.

DOI：10.1143/APEX.3.026201

We have investigated NH3 plasma pretreatment and SiON deposition for the C face of 4H-silicon carbide (4H-SiC) and characterized interface properties. It is revealed that the NH3 plasma pretreatment effectively reduces interface state density and increases field-effect mobility on the C face of 4H-SiC. Both nitrogen and hydrogen passivate interface traps, resulting in improved electron channel mobility. Although the threshold voltage was high due to electron traps in the SiON deposition layer, the nitrided layer formed by NH3 plasma pretreatment suppressed the influence of coulomb scattering of the trapped electrons in the deposited SiON layer, leading to increased field-effect mobility.

• 出版日期2010