Antimony alloys for phase-change memory with high thermal stability

作者：Kao Kin Fu; Chang Chih Chung; Chen Frederick T; Tsai Ming Jinn; Chin Tsung Shune^*

来源：Scripta Materialia, 2010, 63(8): 855-858.

DOI：10.1016/j.scriptamat.2010.06.036

• Phase-change memory
• Thermal stability
• Antimonide
• Ga-Te-Sb alloys

We demonstrate two Sb-based alloys, Ga(25)Te(8)Sb(67) and Ga(18)Te(12)Sb(70), that have a crystallization temperature above 245 degrees C and activation energy of crystallization greater than 5 eV, for phase-change memory application. The temperature for 10 year data retention reaches 183 and 210 degrees C for Ga(18)Te(12)Sb(70) and Ga(25)Te(8)Sb(67), respectively. Test cells made of alloy Ga(25)Te(8)Sb(67) show similar memory switching behavior at pulse widths of 500-20 ns. Compared with the benchmark chalcogenide Ge(2)Sb(2)Te(5), the two antimonide alloys possess much improved thermal stability for applications in phase-change memory.

• 出版日期2010-10
• 单位清华大学