Doping dependence of electronic excitations in high T-c superconducting cuprates

作者：Maekawa S^*; Tohyama T; Shibata Y

来源：Materials Science and Engineering B-Solid State Materials for Advanced Technology, 1999, 63(1-2): 159-162.

DOI：10.1016/S0921-5107(99)00067-7

• t-J model
• exact diagonalization method
• angle-resolved photoemission spectroscopy

The single-particle excitation spectrum is studied in the two-dimensional (2D) t-t'-t "-J model with t, t', t " and J being the first, second and third nearest neighbor hopping parameters of carriers and the nearest neighbor antiferromagnetic interaction, respectively, by using the numerically exact diagonalization method of small clusters. For a set of the parameter values, the momentum dependent spectrum is calculated as a function of hole-carrier density. It is found that the calculated results explain the experimental data of angle-resolved photoemission spectroscopy (ARPES) experiments for insulating Sr2CuO2Cl2 and hole-doped Bi2212, both underdoped and overdoped. The spectrum in electron-doped cuprates is also studied. The results indicate that the electronic structure in the insulating parent materials is essentially the same as that in the high T-c ones, and that the carrier density and the sign of the charge are the physical parameters to control the physical properties.

• 出版日期1999-8-16