A Lateral ZnO Nanowire Photodetector Prepared on Glass Substrate

作者：Weng W Y^*; Chang S J; Hsu C L; Hsueh T J; Chang S P

来源：Journal of the Electrochemical Society, 2010, 157(2): K30-K33.

DOI：10.1149/1.3264650

• II-VI semiconductors
• nanofabrication
• nanowires
• photodetectors
• semiconductor growth
• semiconductor quantum wires
• ultraviolet detectors
• wide band gap semiconductors
• zinc compounds

We report the fabrication of a lateral ZnO nanowire UV photodetector on a glass substrate using tungsten as the growth barrier to suppress the vertical growth of the ZnO nanowires. Upon UV illumination, the detector current increased by more than 1 order of magnitude. Furthermore, the noise equivalent power and the normalized detectivity D(*) of the fabricated lateral ZnO nanowire photodetector were 7.89x10(-11) W and 1.9x10(8) cm Hz(0.5) W(-1), respectively.

• 出版日期2010