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摘要
ZnO films were prepared by filtered cathodic vacuum arc technique with Zn target at different substrate temperatures. The crystallinity is enhanced with increasing substrate temperature and preferably oriented at (103) direction when the substrate temperature is higher than 230degreesC. The PL emission corresponding to the exciton transition at 3.37eV can be observed at room temperature, which indicates that high-quality films have been obtained by this technique. The Hall mobility, which increases with substrate temperature, is dominated by grain boundary scattering.
- 出版日期2001-12
- 单位南阳理工学院
