摘要
Underlayer dependence can be controlled for supercritical fluid deposition (SCFD) of Cu. SCFD, which has a remarkable potential for ultra-conformal deposition and gap-filling, has previously required a metallic underlayer to initiate deposition. Here, this constraint has been overcome by depositing a novel catalytic layer, CuMnxOy, onto a semiconducting and insulating substrate. The stoichiometry of CuMnxOy affected both the morphology of CuMnxOy film and the catalytic effect on succeeding SCFD of Cu. By using this technique of depositing CuMnxOy as a catalytic layer, conformal SCFD of Cu was achieved on high-aspect-ratio trenches (aspect ratio 50) whose surfaces were SiO2. In conclusion, a CuMnxOy film with graded stoichiometry in the depth direction might improve the adhesion between Cu and an insulative underlayer.
- 出版日期2012-5