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摘要
We report the planar and anomalous Nernst effects in epitaxial thin films of spin polarized La2/3Sr1/3MnO3. The thermal counterpart of the anomalous Hall effect in this material (i.e., the anomalous Nernst effect) shows an extreme sensitivity to any parasitic thermal gradient, resulting in large asymmetric voltages under small temperature differences. This should be considered when interpreting the magnitude of the electrical response in nanostructures and devices that operate under high current densities. Finally, none of the observed magnetothermoelectric signals is related to the spin Seebeck effect in this material.
- 出版日期2014-9-4
