Asymmetric pulsing for reliable operation of titanium/manganite memristors

作者:Gomez Marlasca F*; Ghenzi N; Stoliar P; Sanchez M J; Rozenberg M J; Leyva G; Levy P
来源:Applied Physics Letters, 2011, 98(12): 123502.
DOI:10.1063/1.3565431

摘要

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than 10(5) switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

  • 出版日期2011-3-21