摘要
We systematically investigated the Gilbert damping (alpha) and interfacial perpendicular magnetic anisotropy (k(1)) in magnetic tunnel junctions with a MgO-barrier/FeB/MgO-cap layered structure using the spin-torque diode effect. By increasing the MgO cap thickness, alpha decreased, whereas. K-i increased monotonically. Values down to 0.0054 for a and up to 3.3 erg/cm(2) for K-1 were obtained for a MgO cap thickness of 0.6 nm. The small alpha and large K-1 suggest that MgO-capped FeB is a suitable free layer for spintronics devices such as spin-torque oscillators and spin-torque magnetic random access memories.
- 出版日期2014-3