摘要

Compact grating demultiplexers with total-internal-reflection (TIR) facets have been fabricated and characterised based on alpha-Si-on-SiO(2) wafers. The loss of demultiplexers using TIR facets will be 3-5 dB lower than those using echelle facets. The demultiplexer has much more compact size compared with conventional silica-based devices. The dimension of the device is around half millimetre.