科研之友
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摘要
Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current-voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g.
