A dual workfunction gate for thin-gate-insulator Schottky-barrier MOSFETs

作者：Shih Chun Hsing^*; Yeh Sheng Pin

来源：IEEE Transactions on Electron Devices, 2008, 55(9): 2521-2525.

DOI：10.1109/TED.2008.927661

• dopant segregation
• dual workfunction gate (DWG)
• Schottky-barrier MOSFETs (SBMOS)
• thin gate insulator

A dual workfunction gate (DWG) is proposed for the thin-gate-insulator Schottky-barrier MOSFETs (SBMOS) to adjust the barrier distributions by self-aligned tilt-angle implantation. Effects of DWG on SBMOS are investigated using 2-D simulations. Against junction engineering by dopant segregation, as the gate insulator scaled, the stronger gate coupling from DWG can both improve the ON-state barrier lowering for electron and enhance the OFF-state barrier widening for hole. By using DWG architecture, SBMOS can be successfully scaled with thinner gate insulator as the promising candidate for next-generation CMOS devices.

• 出版日期2008-9
• 单位清华大学; 中国科学院电工研究所