Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS

作者：Jiang Liudi^*; Lewis G; Spearing S M; Jennett N M; Monclus M

来源：Microelectronic Engineering, 2010, 87(5-8): 1259-1262.

DOI：10.1016/j.mee.2009.11.039

• Amorphous Si/Ti
• MEMS/NEMS
• Post-CMOS
• Integration

Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si) commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated using a commonly available Si dry etching process. The promising material and process development suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and ICs.

• 出版日期2010-8