An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

作者：Jankovic Nebojsa^*; Zhou Zhongfu; Batcup Steve; Igic Petar

来源：International Journal of Electronics, 2009, 96(7): 767-779.

DOI：10.1080/00207210902847413

• IEBT
• modelling
• sub-circuit
• SPICE
• physical

An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.

• 出版日期2009