Nonvolatile memory devices based on few-layer graphene films

作者：Doh Yong Joo; Yi Gyu Chul^*

来源：Nanotechnology, 2010, 21(10): 105204.

DOI：10.1088/0957-4484/21/10/105204

We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.

• 出版日期2010-3-12