Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers

作者：Mochizuki Kazuhiro^*; Mishima Tomoyoshi; Ishida Yuya; Hatakeyama Yoshitomo; Nomoto Kazuki; Kaneda Naoki; Tshuchiya Tadayoshi; Terano Akihisa; Tsuchiya Tomonobu; Uchiyama Hiroyuki; Tanaka Shigehisa; Nakamura Tohru

来源：Japanese Journal of Applied Physics, 2013, 52(8): 08JN22.

DOI：10.7567/JJAP.52.08JN22

The effect of extrinsic photon recycling (EPR) in p-type gallium nitride (p-GaN), namely, increased ionization ratio (R) of magnesium acceptors owing to radiative recombination, was quantitatively investigated. The lateral extension (L) of EPR was determined by using transmission-line-model (TLM) patterns, formed with GaN p-n junction epitaxial layers on free-standing substrates, as well as by using device simulation. With increasing vertical current (I-V) of the p-n junction, lateral current (I-L) in the p-GaN layer (magnesium concentration: N-Mg = 5 x 10(17) cm(-3)) was found to increase within L of 10 mu m from the edge of the TLM electrodes; the measured I-L corresponded to a large R, namely, 30%. This lateral extension will contribute to reducing base resistance and enhancing conductivity modulation of GaN bipolar power-switching devices for power-electronics applications.

• 出版日期2013-8