Analysis of Data Obtained Using the Thermal-Step Method on a MOS Structure-An Electrostatic Approach

作者：Boyer Ludovic^*; Fruchier Olivier; Notingher Petru Jr; Agnel Serge; Toureille Alain; Rousset Bernard; Sanchez Jean Louis

来源：IEEE Transactions on Industry Applications, 2010, 46(3): 1144-1150.

DOI：10.1109/TIA.2010.2045211

• Electric charge
• metal-oxide-semiconductor (MOS)
• oxide
• reliability
• space charge
• thermal-step method (TSM)

The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper, in view of analyzing the data obtained by TSM in conjunction with capacitance-voltage measurements. Applications to MOS samples with 120-nm-thick oxides are presented.

• 出版日期2010-6