Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires

作者：Kaya Ahmet; Polat K Gurkan; Mayet Ahmed S; Mao Howard; Altindal Semsettin; Islam M Saif^*

来源：Materials Science in Semiconductor Processing, 2018, 75: 124-129.

DOI：10.1016/j.mssp.2017.10.022

• Al-doped ZnO
• Silicon nanowires
• Electrical properties

The p-type Si nanowires were synthesized via deep reactive ion etching (DRIE). Al-doped ZnO films were coated on a p-Si nanowires substrate using the sol-gel method. Al-doped ZnO/p-Si NWs were characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the dark and under illumination at room temperature. Electrical parameters such as series resistance (R-s), ideality factor (n), barrier height (Phi(B)) and doping concentration atoms (N-A) were investigated using the electrical measurements values at room temperature. Overall, I-V and C-V plots of the NWs were close to what was predicted and had excellent performance. The fabricated Al-doped ZnO/p-Si nanowires are more sensitive to light and frequency, so they are a promising candidate to be used as photovoltaic devices and photo-capacitors.

• 出版日期2018-3-1