Proton and gamma-Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18-mu m CMOS Image Sensor

作者：Martin E^*; Nuns T; Virmontois C; David J P; Gilard O

来源：IEEE Transactions on Nuclear Science, 2013, 60(4): 2503-2510.

DOI：10.1109/TNS.2013.2251662

• CMOS active pixel sensor (APS)
• dark current
• gamma irradiation
• hot pixels
• pinned photodiode
• proton irradiation
• random telegraph signals (RTS)

The dark current random telegraph signal (RTS) behavior has been studied in a five-transistor-per-pixel (5T) pinned photodiode 0.18-mu m COTS active pixel sensor (APS). Several devices, irradiated using protons and gamma rays, have been studied in order to assess the ionizing and displacement damage effects. The influence of the proton energy, fluence, ionizing dose and applied bias during irradiation on the number of RTS pixels, the number of discrete levels, maximum transition amplitude, and mean switching time constants is investigated.

• 出版日期2013-8