科研之友
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摘要
A model for computing thermal stress inside a crystal with facets is presented. Using a systematical perturbation analysis, a semi-analytical thermal-stress solution is obtained for constrained directional growth with small lateral heat flux. This solution can be applied to crystals grown by various growth techniques such as the Czochralski method. The semi-analytical nature of the solution leads to a much more efficient approach for computing thermal stress in crystals with facets, compared to a full 3D simulation. Examples are given for crystals pulled in a variety of seed orientations.
- 出版日期2011-1
- 单位北京大学
