Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure

作者：Sato Soshi^*; Kakushima Kuniyuki; Ahmet Parhat; Ohmori Kenji; Natori Kenji; Yamada Keisaku; Iwai Hiroshi

来源：Solid-State Electronics, 2011, 65-66: 2-8.

DOI：10.1016/j.sse.2011.06.011

• Silicon nanowire
• Semi gate-around structure
• Corner angle
• Inversion charge density
• Effective carrier mobility

Structural effects, especially corner angle of upper-corners of trapezoidal and rectangular, and triangular cross-sectional shapes of silicon nanowire field-effect transistors on effective carrier mobility and normalized inversion charge density have been investigated. < 1 0 0 >-directed silicon nanowire field-effect transistors with semi-gate around structure fabricated on (1 0 0)-oriented silicon-on-insulator wafers were evaluated. As the upper-corner angle decreased from obtuse to acute angle, we observed an increased amount of inversion charge using split-CV measurement. On the other hand, the effective carrier mobility dependence on the upper-corner angle seems to have an optimized point near 100 degrees at 296 K. Although normalized inversion charge density was the largest with acute angles, effective carrier mobility with acute upper-corner angle was severely degraded. Considering the intrinsic delay time of SiNW FET, SiNW FETs with trapezoidal cross-section with upper-corner angle of 100 degrees is more suitable in this work to achieve high electrical performance. We believe these findings could represent guidelines for the design of high-performance SiNW FETs.

• 出版日期2011-12