Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

作者：Bonera Emiliano^*; Gatti Riccardo; Isella Giovanni; Norga Gerd; Picco Andrea; Grilli Emanuele; Guzzi Mario; Texier Michael; Pichaud Bernard; von Kaenel Hans; Miglio Leo

来源：Applied Physics Letters, 2013, 103(5): 053104.

DOI：10.1063/1.4817071

We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1-xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1-xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1-xGex/Si interface.

• 出版日期2013-7-29