Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics

作者：Lee Dai Ying^*; Tsai Tsung Ling; Tseng Tseung Yuen

来源：Applied Physics Letters, 2013, 103(3): 032905.

DOI：10.1063/1.4816053

Transition of resistive switching (RS) behavior from bipolar to unipolar is observed in Pt/ZrO2/HfO2/TiN device. Due to the lower oxygen vacancy concentration of the HfO2 layer, formation/rupture of the conducting filament is confined in the HfO2 layer. To fulfill one diode and one resistor (1D1R) structure, the electrical relation between the RS device and diode is investigated. A Pt/InZnO/CoO/Pt/TiN oxide diode is fabricated to provide enough forward current and large forward/reverse current ratio to achieve unipolar RS behavior. The 1D-1R structure with Pt/ZrO2/HfO2/TiN resistive random access memory shows robust retention and nondestructive readout property at 85 degrees C.

• 出版日期2013-7-15