Nanostructure assembly of indium sulphide quantum dots and their characterization

作者：Vigneashwari B; Ravichandran V^*; Parameswaran P; Dash S; Tyagi A K

来源：Journal of Nanoscience and Nanotechnology, 2008, 8(2): 689-694.

DOI：10.1166/jnn.2008.A128

• beta-indium sulphide
• quantum dots
• electrophoretic deposition
• cluster growth
• self-assembly

Nanocrystals (similar to 5 nm) of the semiconducting wide band gap material beta-In2S3 obtained by chemical synthesis through a hydrothermal route were characterized for phase and compositional purity. These nanoparticles exhibited quantum confinement characteristics as revealed by a blue-shifted optical absorption. These quantum dots of beta-ln(2)S(3). were electrically driven from a monodisperse colloidal suspension on to conducting glass substrates by Electophoretic Deposition (EPD) technique and nanostructural thin films were obtained. The crystalline and morphological structures of these deposits were investigated by X-ray diffraction and nanoscopic techniques. We report here that certain interesting nanostructural morphologies were observed in the two-dimensional quantum dot assemblies of beta-In2S3. The effect of the controlling parameters on the cluster growth and deposit integrity was also systematically studied through a series of experiments and the results are reported here.

• 出版日期2008-2