科研之友
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摘要
The Mn5Ge3 compound, thanks to its room-temperature ferromagnetism, metallic character and ability to epitaxially grow on germanium, acts as a potential candidate for spin injection into group-IV semiconductors. Understanding and controlling Ge overgrowth behaviour on Mn5Ge3/Ge heterostructures represents a crucial step to realize Ge/Mn5Ge3/Ge multilayers for numerous spintronic applications. Here, we have combined structural and morphological characterizations with magnetic analyses to study the mechanisms of Ge overgrowth on epitaxial Mn5Ge3 layers in the temperature range of 450-550 degrees C. It is found that deposited Ge instantly reacts with Mn to form a Mn5Ge3 surface layer, which, acting as a surfactant, continuously floats upwards from the growing surface to a distance larger than 70 nm. New Ge layers are successively formed underneath, allowing such a floating Mn5Ge3 surface layer to be stabilized by epitaxy. These observations can be considered as a typical example in which the stabilization of metastable thin films by epitaxy can overcome thermodynamic equilibrium. We have also investigated the effect of carbon adsorption on the top of the Mn5Ge3 layer prior to Ge deposition to control the Mn:Ge reaction. It is shown that adsorbed carbon effectively reduces the out-diffusion of Mn from Mn5Ge3, allowing Ge layers to stack up on top of Mn5Ge3. However, at temperatures of 450-550 degrees C, carbon may react with Mn to form manganese carbides and the resulting Ge overlayers are found to change their orientation from the (111) plane to the (001) plane, which has a higher surface energy. Finally, a strategy to realize Ge/Mn5Ge3/Ge multilayers will be addressed.
- 出版日期2012-10-15
