Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers

作者：Vellvehi M^*; Galvez J L; Perpina X; Jorda X; Godignon P; Millan J

来源：Microelectronic Engineering, 2010, 87(11): 2323-2327.

DOI：10.1016/j.mee.2010.03.011

• IGBT
• Reverse blocking
• AC/AC converter
• Matrix Converter

A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices.

• 出版日期2010-11