Ar plasma induced deep levels in epitaxial n-GaAs

作者：Venter A^*; Nyamhere C; Botha J R; Auret F D; van Ren**urg P J Janse; Meyer W E; Coelho S M M; Kolkovsky V I

来源：Journal of Applied Physics, 2012, 111(1): 013703.

DOI：10.1063/1.3673322

Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E(c) - 0.04 eV, E(c) - 0.07 eV, E(c) - 0.19 eV, E(c) - 0.31 eV, E(c) - 0.53 eV, and E(c) - 0.61 eV). The trap, E(c) - 0.04 eV, labelled E1%26apos; and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E(c) - 0.31 eV

• 出版日期2012-1-1