DLTS characterization of proton-implanted silicon under varying annealing conditions

作者：Laven J G^*; Jelinek M; Job R; Schustereder W; Schulze H J; Rommel M; Frey L

来源：Physica Status Solidi B-Basic Solid State Physics, 2014, 251(11): 2189-2192.

DOI：10.1002/pssb.201400028

• deep-level defects
• hydrogen
• proton implantation
• silicon

Deep-level defects remaining in the upper half of the band-gap of silicon implanted with protons at fluences and annealing temperatures typically used for proton-implantation doping are investigated. For proton fluences in the range of several 10(13) cm(-2) to several 10(14) cm(-2), a multitude of deep-level defects remain active in comparatively high concentrations of up to 10(13) cm(-3) even after anneals at temperatures up to 500 degrees C. The detected deep-levels are assigned to known lattice defects on the basis of their electrical characteristics obtained by Fourier-transform DLTS measurements. Despite the low oxygen content of the float-zone silicon used, a large number of the detected defects are ascribed to (non-) hydrogenated vacancy-oxygen defects. The annealing temperature ranges, in which the deep-level defects were detected, are shown. Furthermore, the dependencies of the deep-level defects on the proton fluence and their depth distributions in the implantation profile are investigated.

• 出版日期2014-11