Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

作者：An Ho Myoung; Kim Hee Dong; Kim Tae Geun^*

来源：Materials Research Bulletin, 2013, 48(12): 5084-5087.

DOI：10.1016/j.materresbull.2013.05.008

• 3D NAND
• CTF
• SONOS
• Charge pumping technique

The energy distribution and density of interface traps (D-it) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After PIE cycling in bulk-type devices, the interface trap density gradually increased from 1.55 x 10(12) cm(-2) eV(-1) to 3.66 x 10(13) cm(-2) eV(-1) due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for At of the TFT-type cells was similar to those of bulk-type cells.

• 出版日期2013-12