d An approach to determine cutoff frequency and maximum oscillation frequency of common emitter heterojunction bipolar transistor

作者：Zhang, Ao; Gao, Jianjun^*

来源：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2020, 33(3): e2545.

DOI：10.1002/jnm.2545

• heterojunction bipolar transistor
• small signal model
• parameter extraction
• short-circuit current gain
• unilateral power gain

Analytical expressions for the short-circuit current gain and unilateral power gain of common emitter heterojunction bipolar transistor (HBT) are presented in this paper. These expressions are derived from a simplified -type small signal equivalent circuit model, which takes into account the influence of the extrinsic resistances and base-collector capacitance distributed nature. Good agreement is obtained between measured and calculated results for both two indium phosphide (InP) HBT devices and a gallium arsenide (GaAs) HBT device over a wide range of bias points.

• 出版日期2020-5
• 单位华东师范大学