摘要
The effect of annealing temperature on sol-gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25-3.19 eV. The films annealed at 450 degrees C temperature shows lower resistivity value of 527.241 Omega m. The deposited nanocrystalline films are suitable for biosensing applications due to its higher surface area.
- 出版日期2014-8