Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities

作者:Noro Shin ichiro*; Takenobu Taishi; Iwasa Yoshihiro; Chang Ho Chol; Kitagawa Susumu; Akutagawa Tomoyuki; Nakamura Takayoshi
来源:Advanced Materials, 2008, 20(18): 3399-+.
DOI:10.1002/adma.200800558

摘要

High and balanced mobilities: Metal-organic thin-film transistors (MOTFTs) that employ metal complexes with narrow band gaps and less pi-conjugated structures are fabricated. These devices show high-performance ambipolar characteristics in comparison with other reported single-component ambipolar TFTs.

  • 出版日期2008-9-17