摘要
The FeFET, based on epitaxial perovskite heterostructures, is termed an OxiM. It showed persistent interfacial conduction even when the ferroelectric polarization curve was swinging on a minor loop and also showed good controllability of drain current using pulse voltages. A neuron circuit composed of OxiMs and an op-amp adder circuit showed that the gain of the neuron circuit could also be modulated smoothly by means of pulse voltages. Using a numerical model of the neuron circuit, we simulated the learning process for "exclusive OR" and achieved a good convergence characteristic.
- 出版日期2011-10-15