A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory

作者：Kiouseloglou Athanasios^*; Navarro Gabriele; Sousa Veronique; Persico Alain; Roule Anne; Cabrini Alessandro; Torelli Guido; Maitrejean Sylvain; Reimbold Gilles; De Salvo Barbara; Clermidy Fabien; Perniola Luca

来源：IEEE Transactions on Electron Devices, 2014, 61(5): 1246-1254.

DOI：10.1109/TED.2014.2310497

• Crystallization speed
• drift
• Ge-rich
• Ge2Sb2Te5 (GST)
• phase change memories

In this paper, we examine the problem of the drift of the low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge2Sb2Te5. A novel procedure, named R-SET technique, is proposed to boost the SET speed of these innovative phase change materials by overcoming the decrease of crystallization speed caused by Ge enrichment. The R-SET technique allows, at the same time, an optimized SET programming of the memory cell and the reduction of the LRS drift with respect to standard SET procedures. A circuit that generates the desired R-SET pulse based on a time reference scheme is proposed and discussed.

• 出版日期2014-5
• 单位中国地震局