科研之友
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摘要
We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the "next-generation'' material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.
- 出版日期2015
- 单位西安交通大学
