Ambient temperature dependence on emission spectrum of InAs quantum dots

作者：Ngo C Y; Yoon S F; Chua S J

来源：Physica Status Solidi (B) Basic Research, 2009, 246(4): 799-802.

DOI：10.1002/pssb.200880575

Semiconductor superluminescent diodes (SLDs) are important broadband light source for fiber optic gyroscope and biomedical imaging. Quantum dots (QDs) have been proposed to be the best candidate for broadband lights sources due to the inhomogeneous broadening of the gain spectrum as a result of the inherited size inhomogeneity of the self-assembled QD growth. In this work, the effect of ambient temperature (25-100 degrees C) on the emission spectrum of InAs QDs with wideband emission was investigated. It was found that the full-width at half-maximum (FWHM) of the photoluminescence (PL) spectra remains more than 125 nm throughout the temperature range, and the redshift as function of temperature is approximately 0.27 meV/K. Activation energy of 270 meV is extracted from the Arrhenius plot and the PL quenching at high temperature is attributed to thermally induced carriers escaping out of the In(0.15)Ga(0.85)As strain-reducing layer.

• 出版日期2009-4