Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications

作者：Gassenq A^*; Guilloy K; Pauc N; Rouchon D; Widiez J; Rothman J; Hartmann J M; Chelnokov A; Reboud V; Calvo V

来源：MRS Communications, 2017, 7(3): 691-694.

DOI：10.1557/mrc.2017.53

Applying sufficient tensile strain to Ge leads to a direct bandgap group IV semiconductor, which emits in the mid-infrared (MIR) wavelength range. However, highly strained-Ge cannot be directly grown on Si because of its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms were then partially etched to keep locally strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated in Ge, which was bonded on Si. Our approach allows envisioning integrated strained-Ge on Si platform for MIR-integrated optics. Silicon photonics merge optical and electronic components that can be integrated together onto a single microchip.

• 出版日期2017-9
• 单位中国地震局