Stable negative differential resistance in porphyrin based sigma-pi-sigma monolayers grafted on silicon

作者:Garg Kavita; Majumder Chiranjib; Gupta Shiv Kumar; Aswal Dinesh Kumar; Nayak Sandip Kumar; Chattopadhyay Subrata*
来源:RSC Advances, 2015, 5(62): 50234-50244.
DOI:10.1039/c5ra09484d

摘要

Two Si-based hybrid self-assembled monolayers were synthesized by electro-grafting two di-O-alkylated porphyrins as the sigma-pi-sigma systems. The monolayers showed a stable and reversible negative differential resistance (NDR) property at room temperature. The monolayer, fabricated using the porphyrin with fluorophenyl groups was more compact and showed a tenfold peak-to-valley ratio (PVR) relative to the other similar system devoid of the fluorine atoms in the porphyrin moiety. This suggested better pre-organization of the former, possibly by hydrogen bonding through the electro-negative fluorine atoms.

  • 出版日期2015