AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy

作者：Tamura Yosuke^*; Hane Kazuhiro

来源：Nanoscale Research Letters, 2015, 10(1): 460.

DOI：10.1186/s11671-015-1178-7

• AlN
• Nanostructure
• Nanowall
• MBE
• Si substrate
• Epitaxial growth
• XRD

AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 degrees C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

• 出版日期2015-12-1