N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

作者：Wong Man Hoi^*; Pei Yi; Chu Rongming; Rajan Siddharth; Swenson Brian L; Brown David F; Keller Stacia; DenBaars Steven P; Speck James S; Mishra Umesh K

来源：IEEE Electron Device Letters, 2008, 29(10): 1101-1104.

DOI：10.1109/LED.2008.2003543

• AlN
• back-barrier
• GaN
• high-electron-mobility transistor (HEMT)
• N-face
• metal-insulator-semiconductor (MIS)

We present a high-performance SiN/AlGaN (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) metal-insulator-semiconductor high-electron-mobility transistor grown on the N-face, in which the 2-D electron gas (2DEG) is induced at the top GaN/AlN interface. The use of AlN eliminates alloy disorder scattering to the 2DEG and provides strong back-barrier confinement of the 2DEG under high electric fields for device scaling. Devices with 0.7-mu m gate length showed a current-gain cutoff frequency (f(T)) of 17 GHz and a power-gain cutoff frequency (f(max)) of 37 GHz. A continuous-wave output power density of 7.1 W/mm was measured at 4 GHz, with 58% power-added efficiency and a large-signal gain of 15.3 dB at a drain bias of 35 V.

• 出版日期2008-10