Ultrahigh- Voltage SiC p-i-n Diodes With Improved Forward Characteristics

作者：Kaji Naoki^*; Niwa Hiroki; Suda Jun; Kimoto Tsunenobu

来源：IEEE Transactions on Electron Devices, 2015, 62(2): 374-381.

DOI：10.1109/TED.2014.2352279

• Carrier lifetime
• junction termination extension (JTE)
• on-resistance
• p-i-n diode
• silicon carbide (SiC)

Silicon carbide (SiC) p-i-n diodes having five different n(-)-layer (i-layer) thicknesses from 48 to 268 mu m are fabricated. The forward characteristics of SiC p-i-n diodes are significantly improved by carrier-lifetime enhancement. After this improvement, the differential on-resistance is inversely proportional to the square root of current density for all the diodes with different thicknesses of n(-)-layer. As a result, the forward current density-voltage characteristics can be approximately expressed by a parabolic function, as in the case of Si p-i-n diodes. Using a 268-mu m-thick n(-)-layer, the lifetime enhancement, and an improved space-modulated junction termination extension structure, a very high blocking voltage over 26.9 kV and low differential on-resistance of 9.7 m Omega.cm(2) are achieved.

• 出版日期2015-2