摘要

By using the Stillinger-Weber atomic interactional potential, we have carried out molecular dynamics simulations of single Si adatom diffusing on the Si( 001) surface and single-layer Si( 001) steps at temperatures ranging from 1000 K to 1300 K. We have presented one new diffusion pathway of a single Si adatom diffusing on the Si( 001) along the direction perpendicular to dimer rows, that can weaken the diffusion anisotropy. We have investigated the process of the single Si adatom diffusing across single-layer Si( 001) steps as well and given adatom diffusion pathways of step-flow and transformation of single-layer into double-layer steps. Our results show that the exchange between an adatom and a surface atom plays an important role in the adatom diffusion process above 1000 K.

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