BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic

作者：Franco J; Graziano S; Kaczer B; Crupi F^*; Ragnarsson L A; Grasser T; Groeseneken G

来源：Microelectronics Reliability, 2012, 52(9-10): 1932-1935.

DOI：10.1016/j.microrel.2012.06.058

A first study of the BTI reliability of a 6 angstrom EOT CMOS process for potential application in sub-threshold logic is presented. Considerable threshold voltage shifts are observed also for sub-threshold operation. The observed shifts convert to a remarkable current reduction due to the exponential dependence of current on Vth in this operating regime. Moreover, the pMOS is observed to degrade significantly more w.r.t. the nMOS device, inducing a detrimental Vth-imbalance. A proper device failure criterion is proposed, based on simulation of the DC robustness of an inverter logic circuit.

• 出版日期2012-10