Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method

作者：Dutta Maitreya; Mandal Saptarshi; Hathwar Raghuraj^*; Fischer Alec M; Koeck Franz A M; Nemanich Robert J; Goodnick Stephen M; Chowdhury Srabanti

来源：IEEE Electron Device Letters, 2018, 39(4): 552-555.

DOI：10.1109/LED.2018.2804978

• Charge carrier lifetime
• diamond
• power semiconductor devices
• p-i-n diodes

The extracted minority carrier lifetime in the n-layer of a diamond p-i-n diode on (111)-oriented diamond is presented here using the diode reverse recoverymethod. The storage time delay and the reverse current varied as a function of the ramp time for the applied signal. The storage time delay and reverse current was extracted for zero ramp time by considering a capacitive overshoot effect that can occur during themeasurement. Theminority carrier lifetime of holes was measured to be similar to 6 ns. The results obtained were compared to p-i-n diodes on (100)- where the n-side was fully depleted. The storage time delay was found to be negligible in the (100)-case. Further, time resolved cathodoluminescence measurements support the lifetime results obtained from the reverse recovery method.

• 出版日期2018-4